Ion Filter

ABSTRACT

The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

CROSS REFERENCES TO RELATED APPLICATIONS

This application claims priority from and is related to commonly ownedU.S. Provisional Patent Application Ser. No. 62/424,360 filed Nov. 18,2016, entitled: ION FILTER, this Provisional Patent Applicationincorporated by reference herein.

FIELD OF THE INVENTION

Invention relates to the field of charged particle sources includingplasma sources for direct etching and deposition, broad-beam ion sourcesfor ion beam deposition and etching, and electron sources for surfacemodification.

BACKGROUND OF THE INVENTION

Plasma processing apparatus used to etch silicon wafers and othersubstrates or to deposit a variety of materials on to various substratescan be very effective for the production of semiconductor devices andother related systems. In its basic form, plasma is generated in asource region from appropriate precursor gases forming positive ions ofthe gas, electrons and neutral radicals. At the wafer, for an etchprocess, there may be a requirement for a more chemical etch primarilyutilizing the neutral radicals or a more physical etch using acceleratedions. In many cases the etching requires a combination of ions andneutral radicals.

The plasma may be generated by a variety of means such as for example inan Inductively Coupled Plasma source (ICP), a Capacitively CoupledPlasma source (CCP), a microwave plasma source or an Electron CyclotronResonance source (ECR). It is frequently the case that the plasmaproduced while being usable for the required purpose, does not have theideal ratio of numbers of ions to numbers of chemically reactiveradicals to achieve the most effective plasma processing of the wafer.It is particularly the case as requirements become stronger to etchmaterial at ever faster rates that simply increasing the flow of gas tothe plasma source and the level of power used to dissociate and ionizethe gas, results in a plasma where there are too many ions in relationto the number of neutral radicals and as the etching process proceedsthe excess numbers of ions may cause damage to the structures beingetched.

The problem described above has been addressed to some extent by variousindividuals and groups over the last twenty years or more, generally ina fairly simplistic manner which has provided sufficient ion numberreduction for their purposes, but does not have the flexibility for usein plasma processing apparatus that will carry out different processesat different times. Prior art methods have been described for directingions to loss surfaces between the plasma source and wafer using magneticfields which may be created either by permanent magnets orelectromagnets. These techniques rely on the trapping of electrons onthe magnetic field lines which then intersect a loss surface. Thelocally produced electric fields ensure that ions are also lost to thesurfaces. Use of electromagnets increases the flexibility of thetechnique as some adjustment can be made to the degree of ion loss. Themagnet based techniques are limited in the pressure range where they maybe used as with increasing pressure there is an increased probabilitythat electrons will not remain trapped on the magnetic field linesbecause they suffer collisions with neutral gas atoms or molecules andrandomly walk across the field lines. At pressures above 10 to 20 mTorr,the technique becomes less effective. See for example U.S. PatentPublication to Lea et al. (U.S. Patent Publication 2002/0185226).

Described more widely in the prior art is the use of a perforated plateor grid, usually manufactured out of a metal that is compatible with theplasma process, such as aluminum or anodized aluminum. This grid orperforated plate is placed across the process chamber between the plasmasource and the wafer. It relies on the high probability of loss of ionand electron pairs to the surface of the plate and to the sides of theapertures on contact. Some neutral radicals will be lost to theperforated plate, but the probability of loss is typically quite a lotless than that for the ion/electron pairs and so the ratio of ions toneutral radicals is reduced with the perforated plate in positioncompared with the ratio without the plate. Some prior art examples areSavas et al. (U.S. Pat. No. 5,811,022); Lea et al. (U.S. PatentPublication 2002/0185226); Antonelli et al. (U.S. Pat. No. 8,084,339);and Martinez et al. (U.S. Pat. No. 8,980,764).

Ion loss will be greater if the transparency of the grid is reduced.That is the area of the apertures compared to the overall area of theplate is reduced. Ion loss will also be increased if the aperture aspectratio (depth divided by diameter) is increased (e.g., the plate isthicker and/or the aperture diameter is smaller). As the aperture aspectratio increases, charged species passing through an aperture haveincreased probability of contacting the side wall of the aperture andbeing lost. Antonelli et al. (U.S. Pat. No. 8,084,339) shows the typicalion loss to be expected as the plate thickness to aperture diameter isincreased.

There is a need to vary the ion to radical number ratio across the waferor conversely obtain the same or similar ion to radical number ratioacross the wafer when the plasma source produces an ion to radicalnumber ratio that varies with position across the source, where theprocess requires, adjustment to the ion to radical number ratio as afunction of time, or both.

Nothing in the prior art provides the benefits attendant with thepresent invention.

Therefore, it is an object of the present invention to provide animprovement which overcomes the inadequacies of the prior art devicesand which is a significant contribution to the advancement of using acharged particle source.

Another object of the present invention is to provide a method for usingion filtering to adjust the number of ions delivered to a substrate, themethod comprising: providing a process chamber; providing a plasmasource operatively connected to the process chamber; providing asubstrate support within the process chamber; providing the substrateonto the substrate support; providing a plurality of electrical biassources; providing an aperture plate in the process chamber, saidaperture plate having a plurality of aperture plate zones, wherein atleast two aperture plate zones of the plurality of aperture zones areoperatively connected to a separate bias of the plurality of electricalbias sources; generating a plasma using the plasma source; processingthe substrate on the substrate support using the generated plasma; andapplying a separate bias voltage from the plurality of electrical biassources to at least two aperture zones of the plurality of aperturezones during the plasma processing of the substrate.

Yet another object of the present invention is to provide a method forusing ion filtering to adjust the number of ions delivered to asubstrate, the method comprising: providing a process chamber; providinga plasma source operatively connected to the process chamber; providinga substrate support within the process chamber; providing the substrateonto the substrate support; providing a plurality of electrical biassources; providing a plurality of aperture plates in the processchamber, at least one of the plurality of aperture plates having aplurality of aperture plate zones, wherein at least two aperture platezones of the plurality of aperture plate zones are operatively connectedto a separate bias of the plurality of electrical bias sources;generating a plasma using the plasma source; processing the substrate onthe substrate support using the generated plasma; and applying aseparate bias voltage from the plurality of electrical bias sources toat least two aperture plate zones of the plurality of aperture platezones during the plasma processing of the substrate.

Still yet another object of the present invention is to provide a methodfor using ion filtering to adjust the number of ions delivered to asubstrate, the method comprising: providing a process chamber; providinga plasma source operatively connected to the process chamber; providinga substrate support within the process chamber; providing the substrateonto the substrate support; providing an electrical bias source;providing an aperture plate in the process chamber, said aperture platebeing operatively connected to the electrical bias source; generating aplasma using the plasma source; processing the substrate on thesubstrate support using the generated plasma; and applying variable biasvoltage from the electrical bias source to the aperture plate, said biasvoltage being varied as a function of time during the plasma processingof the substrate.

Another object of the present invention is to provide a method for usingion filtering to adjust the number of ions delivered to a substrate, themethod comprising: providing a process chamber; providing a plasmasource operatively connected to the process chamber; providing asubstrate support within the process chamber; providing the substrateonto the substrate support; providing an electrical bias source;providing a plurality of aperture plates in the process chamber, atleast one of said plurality of aperture plates being operativelyconnected to the electrical bias source; generating a plasma using theplasma source; processing the substrate on the substrate support usingthe generated plasma; and applying variable bias voltage from theelectrical bias source to at least one of the plurality of apertureplates, said bias voltage being varied as a function of time during theplasma processing of the substrate.

Yet another object of the present invention is to provide a method forusing ion filtering to adjust the number of ions delivered to asubstrate, the method comprising: providing a process chamber; providinga plasma source operatively connected to the process chamber; providinga substrate support within the process chamber; providing the substrateonto the substrate support; providing a plurality of electrical biassources; providing an aperture plate in the process chamber, saidaperture plate having a plurality of aperture plate zones, wherein atleast two aperture plate zones of the plurality of aperture plate zonesare operatively connected to a separate bias of the plurality ofelectrical bias sources; generating a plasma using the plasma source;processing the substrate on the substrate support using the generatedplasma; and applying a separate bias voltage from the plurality ofelectrical bias sources to at least two aperture plate zones of theplurality of aperture plate zones during the plasma processing of thesubstrate, at least one bias voltage being varied as a function of timeduring the plasma processing of the substrate.

Still yet another object of the present invention is to provide a methodfor using ion filtering to adjust the number of ions delivered to asubstrate, the method comprising: providing a process chamber; providinga plasma source operatively connected to the process chamber; providinga substrate support within the process chamber; providing the substrateonto the substrate support; providing a plurality of electrical biassources; providing a plurality of aperture plates in the processchamber, at least one of the plurality of aperture plates having aplurality of aperture plate zones, wherein at least two aperture platezones of the plurality of aperture plate zones is operatively connectedto a separate bias of the plurality of electrical bias sources;generating a plasma using the plasma source; processing the substrate onthe substrate support using the generated plasma; and applying aseparate bias voltage from the plurality of electrical bias sources toat least two aperture plate zones of the plurality of aperture platezones during the plasma processing of the substrate, at least one biasvoltage being varied as a function of time during the plasma processingof the substrate.

Another object of the present invention is to provide an ion filteringsystem comprising: a process chamber; a plasma source operativelyconnected to the process chamber; a substrate support positioned withinthe process chamber; a plurality of electrical bias sources; and anaperture plate in the process chamber, said aperture plate having aplurality of aperture plate zones, wherein at least two aperture platezones of the plurality of aperture plate zones are operatively connectedto a separate bias of the plurality of electrical bias sources.

The foregoing has outlined some of the pertinent objects of the presentinvention. These objects should be construed to be merely illustrativeof some of the more prominent features and applications of the intendedinvention. Many other beneficial results can be attained by applying thedisclosed invention in a different manner or modifying the inventionwithin the scope of the disclosure. Accordingly, other objects and afuller understanding of the invention may be had by referring to thesummary of the invention and the detailed description of the preferredembodiment in addition to the scope of the invention defined by theclaims taken in conjunction with the accompanying drawings.

SUMMARY OF THE INVENTION

The invention described here provides greater control of the ion numbersreaching the wafer than the basic design of prior art. The inventiondescribed here is in particular intended for application to DeepReactive Ion Etching (DRIE) as normally applied to the use of the “Boschprocess” invented by workers at Robert Bosch in Germany, Laermer andSchilp U.S. Pat. No. 5,498,312, however this is not to preclude its usefor other etch or deposition applications.

In the Bosch DRIE process, anisotropic etching of features into thesilicon as defined by a mask on the surface of the silicon takes placeby repetition of an etch and deposition process cycle many times. As theprocess proceeds through one cycle, in the deposition step a passivationlayer is deposited on all surfaces. At the start of the following etchstep (or frequently defined as a first etch sub-step), ions from theplasma are accelerated to the wafer and remove the passivating materialfrom the base of the feature being etched. In the remainder of the etchstep (or the second etch sub-step) silicon is etched isotropically usingthe neutral radicals produced in the plasma. As the cycle is repeatedthe feature defined by the mask is etched further down into the siliconwafer. It is of particular importance to the effective operation of theprocess that in the first etch sub-step the ion flux is well defined interms of a number of parameters, while in the second etch sub-step andin the deposition step the number of ions should be small as they do notcontribute significantly to either step and can have the detrimentaleffect if in too great numbers to reducing the etch selectivity to themask so that the mask is eroded too quickly and the feature ceases to bedefined laterally before it has achieved sufficient depth.

In relation to the Bosch DRIE process it is desirable to increaseaperture plate bias on the aperture plate or between aperture plates orsections of aperture plates, so that during the deposition step andsecond etch sub-step to reduce the number of ions reaching the wafer andso reduce the mask erosion, thereby increasing the selectivity of theoverall process to the mask. The level of aperture plate bias would bereduced during the first etch sub-step so that sufficient numbers ofions can be accelerated to the wafer to achieve the required directionalpassivation removal. For an ion filter divided into annular aperturezones or into other aperture zone geometries, the bias applied to thedriven aperture plate in each sector can be varied as appropriate toachieve a highly uniform ion density across the wafer during the firstetch sub-step and also a very low number of ions to the wafer during thesecond etch sub-step and the deposition step. If the ion filter is notdivided into a number of annular aperture zones, time varying bias maystill be applied in the manner described in this invention for use withregard to the Bosch DRIE process or any other process that requires atime variation in the number of ions reaching the wafer.

Another feature of the present invention is to provide a method forusing ion filtering to adjust the number of ions delivered to asubstrate. The method comprising a process chamber being provided thatis operatively connected to a plasma source. The substrate is providedon a substrate support that is provided within the process chamber. Thesubstrate can further comprise a semiconductor wafer on tape on a frame.A plurality of electrical bias sources are provided. An aperture platehaving a plurality of aperture plate zones is provided in the processchamber, wherein at least two aperture plate zones of the plurality ofaperture plate zones are operatively connected to a separate bias of theplurality of electrical bias sources. The aperture plate can furthercomprise a plurality of apertures. At least one of the plurality ofaperture plate zones can further comprise an annular geometry. Thesubstrate on the substrate support is processed using a plasma generatedusing the plasma source. A separate bias voltage from the plurality ofbias sources is applied to at least two aperture plate zones of theplurality of aperture plate zones during the plasma processing of thesubstrate. The aperture plate can be actively cooled for a period oftime during the plasma processing of the substrate. At least oneaperture plate zone of the plurality of aperture plate zones can begrounded for a period of time during the plasma processing of thesubstrate.

Yet another feature of the present invention is to provide a method forusing ion filtering to adjust the number of ions delivered to asubstrate. The method comprising a process chamber being provided thatis operatively connected to a plasma source. The substrate is providedon a substrate support that is provided within the process chamber. Thesubstrate can further comprise a semiconductor wafer on tape on a frame.A plurality of electrical bias sources are provided. A plurality ofaperture plates is provided in the process chamber wherein at least oneof the plurality of aperture plates having a plurality of aperture platezones, wherein at least two aperture plate zones of the plurality ofaperture plate zones are operatively connected to a separate bias of theplurality of electrical bias sources. At least one of the plurality ofaperture plates can further comprise a plurality of apertures. At leastone of the plurality of aperture plate zones can further comprise anannular geometry. The substrate on the substrate support is processedusing a plasma generated using the plasma source. A separate biasvoltage from the plurality of electrical bias sources is applied to atleast two aperture plate zones of the plurality of aperture plate zonesduring the plasma processing of the substrate. At least one apertureplate zone of the plurality of aperture plate zones can be activelycooled for a period of time during the plasma processing of thesubstrate. At least one aperture plate zone of the plurality of apertureplate zones can be grounded for a period of time during the plasmaprocessing of the substrate. At least one of the plurality of apertureplates can be positioned non-planar to at least one of the plurality ofaperture plates during the plasma processing of the substrate. At leastone of the plurality of aperture plates can be positioned non-parallelto at least one of the plurality of aperture plates during the plasmaprocessing of the substrate.

Still yet another feature of the present invention is to provide amethod for using ion filtering to adjust the number of ions delivered toa substrate. The method comprising a process chamber being provided thatis operatively connected to a plasma source. The substrate is providedon a substrate support that is provided within the process chamber. Thesubstrate can further comprise a semiconductor wafer on tape on a frame.An electrical bias source is provided that is operatively connected toan aperture plate that is provided in the process chamber. The apertureplate can further comprise a plurality of apertures. The substrate onthe substrate support is processed using a plasma generated using theplasma source. A variable bias voltage from the electrical bias sourceis applied to the aperture plate during the plasma processing of thesubstrate. The aperture plate can be actively cooled for a period oftime during the plasma processing of the substrate. The aperture platecan be grounded for a period of time during the plasma processing of thesubstrate. The plasma processing of the substrate can further compriseexposing the substrate to a plasma time division multiplex process whichalternates between deposition and etching on the substrate.

Another feature of the present invention is to provide a method forusing ion filtering to adjust the number of ions delivered to asubstrate. The method comprising a process chamber being provided thatis operatively connected to a plasma source. The substrate is providedon a substrate support that is provided within the process chamber. Thesubstrate can further comprise a semiconductor wafer on tape on a frame.An electrical aperture plate bias source is provided. A plurality ofaperture plates that are operatively connected to the electricalaperture plate bias source are provided in the process chamber. At leastone of the plurality of aperture plates can further comprise a pluralityof apertures. The substrate on the substrate support is processed usinga plasma generated using the plasma source. A variable bias voltage fromthe electrical aperture plate bias source is applied to at least one ofthe plurality of aperture plates during the plasma processing of thesubstrate wherein the bias voltage is varied as a function of time. Atleast one of the plurality of aperture plates can be actively cooled fora period of time during the plasma processing of the substrate. At leastone of the plurality of aperture plates can be grounded for a period oftime during the plasma processing of the substrate. At least one of theplurality of aperture plates can be positioned non-planar to at leastone of the plurality of aperture plates during the plasma processing ofthe substrate. At least one of the plurality of aperture plates can bepositioned non-parallel to at least one of the plurality of apertureplates during the plasma processing of the substrate. The plasmaprocessing of the substrate can further comprise exposing the substrateto a plasma time division multiplex process which alternates betweendeposition and etching on the substrate.

Yet another feature of the present invention is to provide a method forusing ion filtering to adjust the number of ions delivered to asubstrate. The method comprising a process chamber being provided thatis operatively connected to a plasma source. The substrate is providedon a substrate support that is provided within the process chamber. Thesubstrate can further comprise a semiconductor wafer on tape on a frame.A plurality of electrical aperture plate bias sources is provided. Anaperture plate having a plurality of aperture plate zones is provided inthe process chamber, wherein at least two aperture plate zones of theplurality of aperture plate zones are operatively connected to aseparate bias of the plurality of electrical aperture plate biassources. At least one of the plurality of aperture plate zones canfurther comprise an annular geometry. The aperture plate can furthercomprise a plurality of apertures. The substrate on the substratesupport is processed using a plasma generated using the plasma source. Aseparate bias voltage from the plurality of electrical aperture platebias sources is applied to at least two aperture plate zones of theplurality of aperture plate zones during the plasma processing of thesubstrate. At least one aperture plate zone of the aperture plate can beactively cooled for a period of time during the plasma processing of thesubstrate. At least one aperture plate zone of the aperture plate can begrounded for a period of time during the plasma processing of thesubstrate. The plasma processing of the substrate can further compriseexposing the substrate to a plasma time division multiplex process whichalternates between deposition and etching on the substrate.

Still yet another feature of the present invention is to provide amethod for using ion filtering to adjust the number of ions delivered toa substrate. The method comprising a process chamber being provided thatis operatively connected to a plasma source. The substrate is providedon a substrate support that is provided within the process chamber. Thesubstrate can further comprise a semiconductor wafer on tape on a frame.A plurality of electrical aperture plate bias sources is provided. Aplurality of aperture plates having a plurality of aperture plate zonesis provided in the process chamber, wherein at least two aperture platezones of the plurality of aperture plate zones are operatively connectedto a separate bias of the plurality of electrical aperture plate biassources. At least one of the plurality of aperture plate zones canfurther comprise an annular geometry. At least one of the plurality ofaperture plates can further comprise a plurality of apertures. Thesubstrate on the substrate support is processed using a plasma generatedusing the plasma source. A separate bias voltage from the plurality ofelectrical aperture plate bias sources is applied to at least twoaperture plate zones of the plurality of aperture plate zones during theplasma processing of the substrate. At least one aperture plate zone ofthe plurality of aperture plate zones can be actively cooled for aperiod of time during the plasma processing of the substrate. At leastone aperture plate zone of the plurality of aperture plate zones can begrounded for a period of time during the plasma processing of thesubstrate. At least one of the plurality of aperture plates can bepositioned non-planar to at least one of the plurality of apertureplates during the plasma processing of the substrate. At least one ofthe plurality of aperture plates can be positioned non-parallel to atleast one of the plurality of aperture plates during the plasmaprocessing of the substrate. The plasma processing of the substrate canfurther comprise exposing the substrate to a plasma time divisionmultiplex process which alternates between deposition and etching on thesubstrate.

Another feature of the present invention is to provide an ion filteringsystem comprising a process chamber that is operatively connected to aplasma source. A substrate support is positioned within the processchamber along with an aperture plate having a plurality of apertureplate zones. A separate bias of a plurality of electrical aperture platebias sources is operatively connected to at least two aperture platezones of the plurality of aperture plate zones of the aperture plate. Atleast one of the plurality of aperture plate zones of the aperture platecan further comprise an annular geometry. The aperture plate can furthercomprise a plurality of apertures.

The foregoing has outlined rather broadly the more pertinent andimportant features of the present invention in order that the detaileddescription of the invention that follows may be better understood sothat the present contribution to the art can be more fully appreciated.Additional features of the invention will be described hereinafter whichform the subject of the claims of the invention. It should beappreciated by those skilled in the art that the conception and thespecific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures for carrying out the samepurposes of the present invention. It should also be realized by thoseskilled in the art that such equivalent constructions do not depart fromthe spirit and scope of the invention as set forth in the appendedclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a prior art ion filtering system;

FIG. 2 is a view of an aperture plate with a magnified inset of anaperture geometry according to the prior art;

FIG. 3 is a schematic view of an ion filtering system according to oneembodiment of the present invention;

FIG. 4 is a schematic view of an ion filtering system according to oneembodiment of the present invention;

FIG. 5 shows an aperture plate and a magnified view of an option for thegeometry of the aperture plate configuration according to one embodimentof the present invention;

FIG. 6 shows an aperture plate and a magnified view of an option for thegeometry of the aperture plate configuration according to one embodimentof the present invention;

FIG. 7 shows an aperture plate and a magnified view of an option for thegeometry of the aperture plate configuration according to one embodimentof the present invention;

FIG. 8 shows an aperture plate and a magnified view of an option for thegeometry of the aperture plate configuration according to one embodimentof the present invention;

FIG. 9 shows three zones of an aperture plate being biased according toone embodiment of the present invention;

FIG. 10 shows three zones of an aperture plate being biased according toone embodiment of the present invention;

FIG. 11 is a plot of voltage vs. time referenced to a process variableaccording to one embodiment of the present invention;

FIG. 12 is a plot of voltage vs. time referenced to a process variableaccording to one embodiment of the present invention;

FIG. 13 is a plot of voltage vs. time referenced to a process variableaccording to one embodiment of the present invention;

FIG. 14 is a plot of voltage vs. time referenced to a process variableaccording to one embodiment of the present invention; and

FIG. 15 is a plot of voltage vs. time referenced to a process variableaccording to one embodiment of the present invention.

Similar reference characters refer to similar parts throughout theseveral views of the drawings.

DETAILED DESCRIPTION OF THE INVENTION

The present invention provides several method embodiments for using ionfiltering to adjust the number of ions delivered to a substrate. All ofthe method embodiments of the present invention have a process chamberthat is operatively connected to a plasma source wherein the substrateis placed on a substrate support that is provided within the processchamber. All of the method embodiments of the present invention can havethe substrate further comprise a semiconductor wafer on tape on a frame.All of the method embodiments of the present invention generate a plasmausing the plasma source that is used to process the substrate in theprocess chamber.

In all of the method embodiments described herein, when an apertureplate is divided into two or more physically separate zones that may beseparately biased, it is possible by adjusting the bias voltage to adifferent level in the two or more aperture plate zones to adjust thedegree of ion filtering to a greater or lesser extent in the differentzones thereby separately adjusting the number of ions that pass throughthe filter in each of the physically separate zones. Physically separatezones may be described as having a different location in an appropriatecoordinate system for example the Cartesian x, y, z coordinate system orthe cylindrical r, theta, z cylindrical coordinate system. The number ofions delivered to the substrate may be described as “spatially adjusted”when a different degree of ion filtering has been selected in differentaperture plate zones. A change to the number of ions reaching thesubstrate as a function of time may be achieved by adjustment of thebias voltage on one or more aperture plates or zones of aperture platesas a function of time so that the number of ions passing through theaperture plate, assembly of aperture plates or aperture plate zones isvaried as a function of time. This is referred to as “temporaladjustment” of the number ions delivered to the substrate.

In one embodiment according to the present invention, a plurality ofelectrical aperture plate bias sources is provided. An aperture platehaving a plurality of aperture plate zones is provided in the processchamber, wherein at least two aperture plate zones of the plurality ofaperture plate zones are operatively connected to a separate bias of theplurality of electrical aperture plate bias sources. The aperture platecan further comprise a plurality of apertures. At least one of theplurality of aperture plate zones can further comprise an annulargeometry. The number of ions delivered to the substrate can be adjustedspatially and/or temporally for optimal performance by applying aseparate bias voltage from the plurality of aperture plate bias sourcesto at least two aperture plate zones of the plurality of aperture platezones during the plasma processing of the substrate. Further, theaperture plate can be actively cooled for a period of time during theplasma processing of the substrate and/or at least one aperture platezone of the plurality of aperture plate zones can be grounded for aperiod of time during the plasma processing of the substrate.

In one embodiment according to the present invention, a plurality ofelectrical aperture plate bias sources is provided. A plurality ofaperture plates is provided in the process chamber wherein at least oneof the plurality of aperture plates having a plurality of aperture platezones, wherein at least two aperture plate zones of the plurality ofaperture plate zones are operatively connected to a separate bias of theplurality of electrical aperture plate bias sources. At least one of theplurality of aperture plates can further comprise a plurality ofapertures. At least one of the plurality of aperture plate zones canfurther comprise an annular geometry. The number of ions delivered tothe substrate can be adjusted spatially and/ or temporally for optimalperformance by applying a separate bias voltage from the plurality ofelectrical aperture plate bias sources to at least two aperture platezones of the plurality of aperture plate zones during the plasmaprocessing of the substrate. Further, at least one aperture plate zoneof the plurality of aperture plate zones can be actively cooled for aperiod of time during the plasma processing of the substrate and/or atleast one aperture plate zone of the plurality of aperture plate zonescan be grounded for a period of time during the plasma processing of thesubstrate. Moreover, at least one of the plurality of aperture platescan be positioned non-planar to at least one of the plurality ofaperture plates during the plasma processing of the substrate and/or atleast one of the plurality of aperture plates can be positionednon-parallel to at least one of the plurality of aperture plates duringthe plasma processing of the substrate.

In one embodiment according to the present invention, an electricalaperture plate bias source is provided that is operatively connected toan aperture plate that is provided in the process chamber. The apertureplate can further comprise a plurality of apertures. The number of ionsdelivered to the substrate can be adjusted temporally for optimalperformance by applying a time variable bias voltage from the electricalaperture plate bias source to the aperture plate during the plasmaprocessing of the substrate. A “time variable” bias is a bias voltagethat varies with time during the plasma processing of the substrate. Thebias may vary linearly or non-linearly increasing or decreasing duringthe duration of the plasma processing. The polarity may remain constantor may be reversed once or more than once. It may vary in polarityaccording to the instantaneous voltage of an AC waveform or follow themagnitude only. It may comprise an AC waveform superimposed on a DCbackground. If an AC waveform, the frequency may remain constant or mayvary with time. When the process conditions are changed at differentstages of the process as it progresses in time, or individual parametervalues change, the aperture plate bias may be adjusted in step withchanges, as a more complex function of changes or out of phase withchanges. The aperture plate bias may be held constant for periods oftime but then varied at other times during the process. Further, theaperture plate can be actively cooled for a period of time during theplasma processing of the substrate and/or the aperture plate can begrounded for a period of time during the plasma processing of thesubstrate. Moreover, the plasma processing of the substrate can furthercomprise exposing the substrate to a plasma time division multiplexprocess which alternates between deposition and etching on thesubstrate.

In one embodiment according to the present invention, an electricalaperture plate bias source is provided. One or more of the apertureplates are operatively connected to the electrical aperture plate biassource. At least one of the plurality of aperture plates can furthercomprise a plurality of apertures. The number of ions delivered to thesubstrate can be adjusted temporally for optimal performance by applyinga variable bias voltage from the electrical aperture plate bias sourceto at least one of the plurality of aperture plates during the plasmaprocessing of the substrate wherein the bias voltage is varied as afunction of time. Further, at least one of the plurality of apertureplates can be actively cooled for a period of time during the plasmaprocessing of the substrate and/or at least one of the plurality ofaperture plates can be grounded for a period of time during the plasmaprocessing of the substrate. Moreover, at least one of the plurality ofaperture plates can be positioned non-planar to at least one of theplurality of aperture plates during the plasma processing of thesubstrate and/or at least one of the plurality of aperture plates can bepositioned non-parallel to at least one of the plurality of apertureplates during the plasma processing of the substrate. Also, the plasmaprocessing of the substrate can further comprise exposing the substrateto a plasma time division multiplex process which alternates betweendeposition and etching on the substrate.

In one embodiment according to the present invention, a plurality ofelectrical aperture plate bias sources is provided. An aperture platehaving a plurality of aperture plate zones is provided in the processchamber, wherein at least two aperture plate zones of the plurality ofaperture plate zones are operatively connected to a separate bias of theplurality of electrical aperture plate bias sources. At least one of theplurality of aperture plate zones can further comprise an annulargeometry. At least one of the plurality of aperture plates can furthercomprise a plurality of apertures. The number of ions delivered to thesubstrate can be adjusted spatially and/ or temporally for optimalperformance by applying a separate bias voltage from the plurality ofelectrical aperture plate bias sources to at least two aperture platezones of the plurality of aperture plate zones during the plasmaprocessing of the substrate. Further, at least one aperture plate zoneof the plurality of aperture plate zones can be actively cooled for aperiod of time during the plasma processing of the substrate and/or atleast one aperture plate zone of the plurality of aperture plate zonescan be grounded for a period of time during the plasma processing of thesubstrate. Moreover, at least one of the plurality of aperture platescan be positioned non-planar to at least one of the plurality ofaperture plates during the plasma processing of the substrate and/or atleast one of the plurality of aperture plates can be positionednon-parallel to at least one of the plurality of aperture plates duringthe plasma processing of the substrate. Also, the plasma processing ofthe substrate can further comprise exposing the substrate to a plasmatime division multiplex process which alternates between deposition andetching on the substrate.

In one embodiment according to the present invention, a plurality ofelectrical aperture plate bias sources is provided. A plurality ofaperture plates having a plurality of aperture plate zones is providedin the process chamber, wherein at least two aperture plate zones of theplurality of aperture plate zones are operatively connected to aseparate bias of the plurality of electrical aperture plate biassources. At least one of the plurality of aperture plate zones canfurther comprise an annular geometry. At least one of the plurality ofaperture plates can further comprise a plurality of apertures. Thenumber of ions delivered to the substrate can be adjusted spatiallyand/or temporally for optimal performance by applying a separate biasvoltage from the plurality of electrical aperture plate bias sources toat least two aperture plate zones of the plurality of aperture platezones during the plasma processing of the substrate. Further, at leastone aperture plate zone of the plurality of aperture plate zones can beactively cooled for a period of time during the plasma processing of thesubstrate and/or at least one aperture plate zone of the plurality ofaperture plate zones can be grounded for a period of time during theplasma processing of the substrate. Moreover, at least one of theplurality of aperture plates can be positioned non-planar to at leastone of the plurality of aperture plates during the plasma processing ofthe substrate and/or at least one of the plurality of aperture platescan be positioned non-parallel to at least one of the plurality ofaperture plates during the plasma processing of the substrate. Also, theplasma processing of the substrate can further comprise exposing thesubstrate to a plasma time division multiplex process which alternatesbetween deposition and etching on the substrate.

As shown in FIG. 1, the prior art teaches a process chamber 100 that isoperatively connected to a plasma source 120 with a substrate support130 that is positioned within the process chamber 100 for supporting asubstrate 170. An aperture plate 190 having a plurality of apertures 195is positioned within the process chamber 100. A substrate bias source140 may be operatively connected to the substrate support 130. A gassupply 110 is operatively connected to the process chamber 100 and anexhaust 150 is operatively connected to the process chamber 100.

A prior art aperture plate is shown in FIG. 2 with an insert of amagnified view of the aperture geometry.

As shown in FIG. 3, in one embodiment according to the presentinvention, a process chamber 100 that may be operatively connected to aplasma source 120 with a substrate support 130 that may be positionedwithin the process chamber 100 for supporting a substrate 170. Inaddition, a plurality of aperture plates 190 having a plurality ofapertures that are aligned with one another is shown. A substrate biassource 140 may be operatively connected to the substrate support 130. Agas supply 110 may be operatively connected to the process chamber 100and an exhaust 150 may be operatively connected to the process chamber100.

As shown in FIG. 4, in one embodiment according to the presentinvention, a process chamber 100 that may be operatively connected to aplasma source 120 with a substrate support 130 that may be positionedwithin the process chamber 100 for supporting a substrate 170. Inaddition, a plurality of aperture plates 190, 191, 192 having aplurality of apertures is shown. The aperture plates can be offset toone another. The aperture plates 190, 192 can overlap. In regions wherethe aperture plates 190, 191, 192 overlap, some apertures in the overlapregion can overlap other apertures. Some apertures in the overlap regionmay not overlap another aperture. A substrate bias source 140 can beoperatively connected to the substrate support 130. A gas supply 110 maybe operatively connected to the process chamber 100 and an exhaust 150may be operatively connected to the process chamber 100.

FIG. 5 shows an aperture plate 220 and a magnified view of an option forthe geometry of an aperture plate zone. The aperture plate 220 having aplurality of aperture plate zones according to one embodiment of thepresent invention.

FIG. 6 shows an aperture plate 221 and a magnified view of an option forthe geometry of an aperture plate zone. The aperture plate 221 having aplurality of aperture plate zones according to one embodiment of thepresent invention.

FIG. 7 shows an aperture plate 222 and a magnified view of an option forthe geometry of an aperture plate zone. The aperture plate 222 having aplurality of aperture plate zones according to one embodiment of thepresent invention. In addition, FIG. 7 shows one aperture plate bias 225being operatively connected to one of the plurality of aperture platezones and another aperture plate bias 226 being operatively connected toanother one of the plurality of aperture plate zones.

FIG. 8 shows an aperture plate 222 and a magnified view of an option forthe geometry of an aperture plate zone. The aperture plate 222 having aplurality of aperture plate zones according to one embodiment of thepresent invention. In addition, FIG. 8 shows one aperture plate bias 225being operatively connected to more than one of the plurality ofaperture plate zones and another aperture plate bias 226 beingoperatively connected to another one of the plurality of aperture platezones.

As shown in FIG. 9, a plurality of electrical aperture plate biassources are each operatively connected to a separate aperture platezone. FIG. 9 shows a plurality of electrical aperture plate bias sources206, 207, 208 operatively connected to separate aperture plate zones202, 203, 204 of a plurality of aperture zones of the aperture plateaccording to one embodiment of the present invention. A representativeelectrical insulating component 209 is shown that may be used to supportand maintain the spacing between the aperture plates while allowing apotential difference to be applied between aperture plates or zones ofaperture plates.

As shown in FIG. 10, a group of aperture plates, with at least oneaperture plate having a plurality of aperture plate zones 202, 203, 204.A plurality of electrical aperture plate bias sources 206, 207, 208 areeach operatively connected to at least one aperture plate zone of anaperture plate that has a plurality of aperture zones according to oneembodiment of the present invention. FIG. 10 also shows a groundedaperture plate. Representative electrical insulating components 209, 210are shown that may be used to support and maintain the spacing betweenthe aperture plates while allowing a potential difference to be appliedbetween aperture plates or zones of aperture plates.

FIGS. 11 to 15 show plots of aperture plate bias voltage vs. timereferenced to changes in a process variable. Specifically, the biasapplied to an aperture plate or one of a number of aperture plates or anaperture plate zone of an aperture plate may be applied in time such asto be synchronous with changes in a process parameter or shifted in timewith respect to changes in a process parameter or reflecting only somechanges in the process parameter. Each plot of FIGS. 11 to 15 shows anembodiment according to the present invention. A process variable caninclude process set points and/or systems responses. Process set pointscan include RF power, process pressure, gas flows, and/or gascompositions. Process set points can be recipe defined. System responsescan be measurable responses from the system. System responses caninclude throttle valve position, matching network variable capacitorpositions, RF reflected power, etc. Systems responses can also includeprocess measurements such as plasma density, plasma intensity, plasmacomposition (e.g. through emission spectroscopy), and/or measurements ofsubstrate properties (e.g. film thickness, etch depth, etc.). Theprocess measurements can be taken in-situ during the process. Anaperture plate bias voltage can be synchronous or asynchronous with aprocess variable. An aperture plate bias voltage can be in phase or outof phase with a process variable. While the figures show voltage curvesof similar frequency to a process variable, a voltage curve can be at adifferent frequency than any or all process variables.

In any embodiment of the present invention, at least one of the apertureplates can be planar or non-planar. An aperture plate can be parallel tothe substrate or the aperture plate can be non-parallel to thesubstrate. An aperture plate can be domed. An aperture plate can consistof a single material or multiple materials. An aperture plate can bepartially or completely conductive; partially or completely dielectric;and/or partially or completely semiconducting.

In any embodiment of the present invention, all aperture plates can bethe same size or at least one aperture plate can be a different sizefrom the other aperture plates. All aperture plates can be the sameshape or at least one plate can be a different shape from the otheraperture plates. At least a portion of two aperture plates can benon-coplanar or all aperture plates can be non-coplanar. At least aportion of two aperture plates can be co-planar or all plates can beco-planar. At least a portion of two aperture plates can be parallel orat least a portion of two aperture plates can be non-parallel. Noaperture plates can overlap or at least a portion of two aperture platescan overlap. At least one aperture within a plate can overlap anaperture in a second plate or more than one aperture can overlap or allapertures can overlap one another. At least one aperture within a platecannot overlap an aperture in a second plate or more than one aperturecannot overlap or no apertures can overlap one another. At least oneaperture plate can be completely overlapped by a second aperture plateor all aperture plates can overlap.

In any embodiment of the present invention, at least one aperture platecan be electrically isolated from a second plate or more than twoaperture plates can be electrically isolated from each other or allaperture plates electrically isolated from each other. At least oneaperture plate can be electrically connected to a second plate or morethan two aperture plates can be electrically connected to each other orall aperture plates can be electrically connected to each other. Atleast one aperture plate can be isolated from ground or more than oneaperture plate can be isolated from ground or all aperture plates can beisolated from ground. At least one aperture plate can be grounded ormore than one aperture plate can be grounded or all aperture plates canbe grounded. At least one aperture plate can be divided into more thanone aperture plate zones or more than one aperture plate can havemultiple zones or all aperture plates can have multiple zones.

In any embodiment of the present invention, the apertures in differentaperture plates, within an aperture plate, between different apertureplate zones and/or within an aperture plate zone can be the same size,shape and/or aspect ratio or a variety of sizes, shapes and/or aspectratios.

In any embodiment of the present invention, a voltage can be applied toat least one aperture plate. The voltage can be AC or DC or acombination of both. The voltages applied to different aperture plates,within an aperture plate, between different aperture plate zones and/orwithin an aperture plate zone can be the same or may vary with respectto amplitude, frequency and/or phase during some portion of the process.Any aperture plate, or aperture plate zone may be grounded for someportion of the process

In any embodiment of the present invention, more than one aperture canoverlap the substrate. The aperture plate can be divided into more thanone aperture plate zone or at least two aperture plate zones that areelectrically isolated from each other or all aperture plate zones can beelectrically isolated from each other. At least two aperture plate zonescan be electrically connected to each other or all aperture plate zonescan be electrically connected to each other. At least two aperture platezones can be the same shape or all aperture plate zones can be the sameshape. At least two aperture plate zones can be a different shape or allaperture plate zones can be a different shape. All aperture plate zonescan be the same size or at least two aperture plate zones can be adifferent size. At least one aperture plate zone can be electricallygrounded. A voltage can be applied to at least one aperture plate zoneor a voltage can be applied to more than one aperture plate zone or avoltage can be applied to all aperture plate zones. The same voltage canbe applied to all aperture plate zones or at least two aperture platezones can have a different voltage or a different voltage for at least aportion of the plasma process or a different voltage for the entireplasma process.

The present disclosure includes that contained in the appended claims,as well as that of the foregoing description. Although this inventionhas been described in its preferred form with a certain degree ofparticularity, it is understood that the present disclosure of thepreferred form has been made only by way of example and that numerouschanges in the details of construction and the combination andarrangement of parts may be resorted to without departing from thespirit and scope of the invention.

Now that the invention has been described,

What is claimed is:
 1. A method for using ion filtering to adjust thenumber of ions delivered to a substrate, the method comprising:providing a process chamber; providing a plasma source operativelyconnected to the process chamber; providing a substrate support withinthe process chamber; providing the substrate onto the substrate support;providing a plurality of electrical bias sources; providing an apertureplate in the process chamber, said aperture plate having a plurality ofaperture plate zones, wherein at least two aperture plate zones of theplurality of aperture plate zones are operatively connected to aseparate bias of the plurality of electrical bias sources; generating aplasma using the plasma source; processing the substrate on thesubstrate support using the generated plasma; and applying a separatebias voltage from the plurality of electrical bias sources to at leasttwo aperture plate zones of the plurality of aperture plate zones duringthe plasma processing of the substrate.
 2. The method according to claim1, wherein at least one of the plurality of aperture plate zones furthercomprising an annular geometry.
 3. The method according to claim 1,wherein the substrate further comprising a semiconductor wafer on tapeon a frame.
 4. The method according to claim 1, wherein the apertureplate further comprising a plurality of apertures.
 5. The methodaccording to claim 1, wherein the aperture plate is actively cooled fora period of time during the plasma processing of the substrate.
 6. Themethod according to claim 1, wherein at least one zone of the pluralityof aperture plate zones is grounded for a period of time during theplasma processing of the substrate.
 7. A method for using ion filteringto adjust the number of ions delivered to a substrate, the methodcomprising: providing a process chamber; providing a plasma sourceoperatively connected to the process chamber; providing a substratesupport within the process chamber; providing the substrate onto thesubstrate support; providing a plurality of electrical bias sources;providing a plurality of aperture plates in the process chamber, atleast one of the plurality of aperture plates having a plurality ofaperture plate zones, wherein at least two aperture plate zones of theplurality of aperture plate zones are operatively connected to aseparate bias of the plurality of electrical bias sources; generating aplasma using the plasma source; processing the substrate on thesubstrate support using the generated plasma; and applying a separatebias voltage from the plurality of electrical bias sources to at leasttwo aperture plate zones of the plurality of aperture plate zones duringthe plasma processing of the substrate.
 8. The method according to claim7, wherein at least one of the plurality of aperture plate zones furthercomprising an annular geometry.
 9. The method according to claim 7,wherein the substrate further comprising a semiconductor wafer on tapeon a frame.
 10. The method according to claim 7, wherein at least one ofthe plurality of aperture plates further comprising a plurality ofapertures.
 11. The method according to claim 7, wherein at least oneaperture plate zone of the plurality of aperture plate zones is activelycooled for a period of time during the plasma processing of thesubstrate.
 12. The method according to claim 7, wherein at least oneaperture plate zone of the plurality of aperture plate zones is groundedfor a period of time during the plasma processing of the substrate. 13.The method according to claim 7, wherein at least one of the pluralityof aperture plates is positioned non-planar to at least one of theplurality of aperture plates during the plasma processing of thesubstrate.
 14. The method according to claim 7, wherein at least one ofthe plurality of aperture plates is positioned non-parallel to at leastone of the plurality of aperture plates during the plasma processing ofthe substrate.
 15. A method for using ion filtering to adjust the numberof ions delivered to a substrate, the method comprising: providing aprocess chamber; providing a plasma source operatively connected to theprocess chamber; providing a substrate support within the processchamber; providing the substrate onto the substrate support; providingan electrical bias source; providing an aperture plate in the processchamber, said aperture plate being operatively connected to theelectrical bias source; generating a plasma using the plasma source;processing the substrate on the substrate support using the generatedplasma; and applying variable bias voltage from the electrical biassource to the aperture plate, said bias voltage being varied as afunction of time during the plasma processing of the substrate.
 16. Themethod according to claim 15, wherein the substrate further comprising asemiconductor wafer on tape on a frame.
 17. The method according toclaim 15, wherein the aperture plate further comprising a plurality ofapertures.
 18. The method according to claim 15, wherein the apertureplate is actively cooled for a period of time during the plasmaprocessing of the substrate.
 19. The method according to claim 15,wherein the aperture plate is grounded for a period of time during theplasma processing of the substrate.
 20. The method according to claim15, wherein the plasma processing of the substrate further comprisingexposing the substrate to a plasma time division multiplex process whichalternates between deposition and etching on the substrate.
 21. A methodfor using ion filtering to adjust the number of ions delivered to asubstrate, the method comprising: providing a process chamber; providinga plasma source operatively connected to the process chamber; providinga substrate support within the process chamber; providing the substrateonto the substrate support; providing an electrical bias source;providing a plurality of aperture plates in the process chamber, atleast one of said plurality of aperture plates being operativelyconnected to the electrical bias source; generating a plasma using theplasma source; processing the substrate on the substrate support usingthe generated plasma; and applying variable bias voltage from theelectrical bias source to at least one of the plurality of apertureplates, said bias voltage being varied as a function of time during theplasma processing of the substrate.
 22. The method according to claim21, wherein the substrate further comprising a semiconductor wafer ontape on a frame.
 23. The method according to claim 21, wherein at leastone of the plurality of aperture plates further comprising a pluralityof apertures.
 24. The method according to claim 21, wherein at least oneof the plurality of aperture plates is actively cooled for a period oftime during the plasma processing of the substrate.
 25. The methodaccording to claim 21, wherein at least one of the plurality of apertureplates is grounded for a period of time during the plasma processing ofthe substrate.
 26. The method according to claim 21, wherein at leastone of the plurality of aperture plates is positioned non-planar to atleast one of the plurality of aperture plates during the plasmaprocessing of the substrate.
 27. The method according to claim 21,wherein at least one of the plurality of aperture plates is positionednon-parallel to at least one of the plurality of aperture plates duringthe plasma processing of the substrate.
 28. The method according toclaim 21, wherein the plasma processing of the substrate furthercomprising exposing the substrate to a plasma time division multiplexprocess which alternates between deposition and etching on thesubstrate.
 29. A method for using ion filtering to adjust the number ofions delivered to a substrate, the method comprising: providing aprocess chamber; providing a plasma source operatively connected to theprocess chamber; providing a substrate support within the processchamber; providing the substrate onto the substrate support; providing aplurality of electrical bias sources; providing an aperture plate in theprocess chamber, said aperture plate having a plurality of apertureplate zones, wherein at least two aperture plate zones of the pluralityof aperture plate zones are operatively connected to a separate bias ofthe plurality of electrical bias sources; generating a plasma using theplasma source; processing the substrate on the substrate support usingthe generated plasma; and applying a separate bias voltage from theplurality of electrical bias sources to at least two aperture platezones of the plurality of aperture plate zones during the plasmaprocessing of the substrate, at least one bias voltage being varied as afunction of time during the plasma processing of the substrate.
 30. Themethod according to claim 29, wherein at least one of the plurality ofaperture plate zones further comprising an annular geometry.
 31. Themethod according to claim 29, wherein the substrate further comprising asemiconductor wafer on tape on a frame.
 32. The method according toclaim 29, wherein the aperture plate further comprising a plurality ofapertures.
 33. The method according to claim 29, wherein at least oneaperture plate zone of the aperture plate is actively cooled for aperiod of time during the plasma processing of the substrate.
 34. Themethod according to claim 29, wherein at least one aperture plate zoneof the aperture plate is grounded for a period of time during the plasmaprocessing of the substrate.
 35. The method according to claim 29,wherein the plasma processing of the substrate further comprisingexposing the substrate to a plasma time division multiplex process whichalternates between deposition and etching on the substrate.
 36. A methodfor using ion filtering to adjust the number of ions delivered to asubstrate, the method comprising: providing a process chamber; providinga plasma source operatively connected to the process chamber; providinga substrate support within the process chamber; providing the substrateonto the substrate support; providing a plurality of electrical biassources; providing a plurality of aperture plates in the processchamber, at least one of the plurality of aperture plates having aplurality of aperture plate zones, wherein at least two aperture platezones of the plurality of aperture plate zones is operatively connectedto a separate bias of the plurality of electrical bias sources;generating a plasma using the plasma source; processing the substrate onthe substrate support using the generated plasma; and applying aseparate bias voltage from the plurality of electrical bias sources toat least two aperture plate zones of the plurality of aperture platezones during the plasma processing of the substrate, at least one biasvoltage being varied as a function of time during the plasma processingof the substrate.
 37. The method according to claim 36, wherein at leastone of the plurality of aperture plate zones further comprising anannular geometry.
 38. The method according to claim 36, wherein thesubstrate further comprising a semiconductor wafer on tape on a frame.39. The method according to claim 36, wherein at least one of theplurality of aperture plates further comprising a plurality ofapertures.
 40. The method according to claim 36, wherein at least oneaperture plate zone of the plurality of aperture plate zones is activelycooled for a period of time during the plasma processing of thesubstrate.
 41. The method according to claim 36, wherein at least oneaperture plate zone of the plurality of aperture plate zones is groundedfor a period of time during the plasma processing of the substrate. 42.The method according to claim 36, wherein at least one of the pluralityof aperture plates is positioned non-planar to at least one of theplurality of aperture plates during the plasma processing of thesubstrate.
 43. The method according to claim 36, wherein at least one ofthe plurality of aperture plates is positioned non-parallel to at leastone of the plurality of aperture plates during the plasma processing ofthe substrate.
 44. The method according to claim 36, wherein the plasmaprocessing of the substrate further comprising exposing the substrate toa plasma time division multiplex process which alternates betweendeposition and etching on the substrate.
 45. An ion filtering systemcomprising: a process chamber; a plasma source operatively connected tothe process chamber; a substrate support positioned within the processchamber; a plurality of electrical bias sources; and an aperture platein the process chamber, said aperture plate having a plurality ofaperture plate zones, wherein at least two aperture plate zones of theplurality of aperture plate zones are operatively connected to aseparate bias of the plurality of electrical bias sources.
 46. Thesystem according to claim 45, wherein at least one of the plurality ofaperture plate zones further comprising an annular geometry.
 47. Thesystem according to claim 45, wherein the aperture plate furthercomprising a plurality of apertures.